Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions-Reference-Cited by-同舟云学术

Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions

Published:2013-07-02 Issue:10 Volume:96 Page:3290-3295
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Osterberg Daniel D.¹,Youngsman John¹²,Ubic Rick¹²³,Reimanis Ivar E.⁴,Butt Darryl P.¹²

Affiliation:

1. Department of Materials Science and Engineering; Boise State University; 1910 University Dr. Boise Idaho 83725

2. Center for Advanced Energy Studies; 995 University Boulevard Idaho Falls Idaho 83401

3. Boise State Center for Materials Characterization; Boise State University; 1910 University Dr. Boise Idaho 83725

4. Metallurgical and Materials Engineering Department; Colorado Center for Advanced Ceramics; Colorado School of Mines; 1500 Illinois St. Golden Colorado 80401

Funder

Battelle Energy Alliance

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.12465/fullpdf

Reference43 articles.

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4. Properties of Silicon Carbide for Nuclear Fuel Particle Coatings;Price;J. Nucl. Mater.,1977

5. Ceramic Materials for Fusion;Rovner;J. Nucl. Mater.,1976

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