Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy-Reference-Cited by-同舟云学术

Inline electron holography and VEELS for the measurement of strain in ternary and quaternary (In,Al,Ga)N alloyed thin films and its effect on bandgap energy

Published:2016-01 Issue:1 Volume:261 Page:27-35
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:Journal of Microscopy

Author:

MÁNUEL J.M.¹,KOCH C.T.²,ÖZDÖL V.B.³,SIGLE W.⁴,VAN AKEN P.A.⁴,GARCÍA R.¹,MORALES F.M.¹

Affiliation:

1. IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cádiz; Cádiz Spain

2. Department of Physics; Humboldt University; Berlin Germany

3. National Center for Electron Microscopy; Lawrence Berkeley National Laboratory; Berkeley California U.S.A

4. Stuttgart Center for Electron Microscopy; Max Planck Institute for Solid State Research; Germany

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jmi.12312/fullpdf

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