Oxygen-Vacancy-Related High Temperature Dielectric Relaxation in (Pb1−x Ba x )ZrO3 Ceramics-Reference-Cited by-同舟云学术

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Oxygen-Vacancy-Related High Temperature Dielectric Relaxation in (Pb1−x Ba x )ZrO3 Ceramics

Published:2014-11-03 Issue:2 Volume:98 Page:551-558
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Zhang Tian-Fu¹,Tang Xin-Gui¹,Liu Qiu-Xiang¹,Jiang Yan-Ping¹,Huang Xian-Xiong¹

Affiliation:

1. School of Physics and Optoelectric Engineering; Guangdong University of Technology; Guangzhou Higher Education Mega Centre; Guangzhou 510006 China

Funder

National Natural Science Foundation of China

Guangdong Provincial Natural Science Foundation of China

Guangdong Provincial Educational Commission of China

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.13317/fullpdf

Reference33 articles.

1. Mechanical Self-Confinement to Enhance Energy Storage Density of Antiferroelectric Capacitors;Young;J. Appl. Phys.,2013

2. Dielectric Studies of Phase Transitions in Pb1−xBaxZrO3;Pokharel;J. Appl. Phys.,2000

3. Microstructure and Optical Properties of Amorphous and Crystalline PbZrO3 Thin Films Grown on Si(100) Substrates by a Sol-Gel Process;Tang;Solid State Commun.,2000

4. Superstructure Determination of PbZrO3;Yamasaki;Acta. Cryst.,1998

5. Antiferroelectric PbZrO3 Thin Films: Structure, Properties and Irradiation Effects;Sternberg;J. Eur. Ceram. Soc.,2004

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