Dependence of Semiconductor to Metal Transition of VO2 (011)/NiO{100}/MgO{100}/TiN{100}/Si{100} Heterostructures on Thin Film Epitaxy and Nature of Strain-Reference-Cited by-同舟云学术

Dependence of Semiconductor to Metal Transition of VO2 (011)/NiO{100}/MgO{100}/TiN{100}/Si{100} Heterostructures on Thin Film Epitaxy and Nature of Strain

Published:2015-01-08 Issue:4 Volume:98 Page:1201-1208
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Bayati Reza¹,Molaei Roya²,Wu Fan³,Narayan Jagdish³,Yarmolenko Sergey⁴

Affiliation:

1. Intel Corporation; IMO-RA, RA2 Hillsboro Oregon 97124

2. Intel Corporation; D1C, RA2 Hillsboro Oregon 97124

3. Princeton Institute for the Science and Technology of Materials (PRISM); Princeton University; Princeton New Jersey 08540

4. NSF-ERC Center for Revolutionizing Metallic Biomaterials; North Carolina A&T State University; Greensboro North Carolina 27411

Funder

US National Science Foundation

NSF-ERC Center for Revolutionizing Metallic Biomaterials

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.13454/fullpdf

Reference44 articles.

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2. The Metal-Insulator Transitions of VO2: A Band Theoretical Approach;Eyert;Ann. Phys. (Leipzig),2002

3. The Two Components of the Crystallographic Transition in VO2;Goodenough;J. Solid State Chem.,1971

4. Electron Localization Induced by Uniaxial Stress in Pure VO2;Pouget;Phys. Rev. Lett.,1975

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