Kinetics and Mechanisms of High-Temperature Creep in Silicon Carbide: II, Chemically Vapor Deposited
Author:
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1151-2916.1984.tb19510.x/fullpdf
Reference9 articles.
1. Kinetics and Mechanisms of High-Temperature Creep in Silicon Carbide: I, Reaction-Bonded
2. Mechanical Properties of Polycrystalline beta-Sic
3. Dislocation movement and slip systems in ?-SiC
4. High‐temperature, multi‐atmosphere, constant stress compression creep apparatus
5. The betaalpha Transformation in Polycrystalline SiC: IV, A Comparison of Conventionally Sintered, Hot-Pressed, Reaction-Sintered, and Chemically Vapor-Deposited Samples
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