Effect of Oxygen Partial Pressure on Nitridation of Silicon

Author:

MITOMO MAMORU

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Reference9 articles.

1. Kinetics of the Oxidation and Nitridation of Silicon at High Temperatures

2. 2D. S. Thompson, P. L. Pratt, and G. H. Stewart ; pp. 33 -51, in Science of Ceramics , Vol. 3 . Academic Press, London and New York, 1967 .

3. 4N. L. Parr, and E. R. W. May , "Technology and Engineering Applications of Reaction-Bonded Si3N4," Proc. Br. Ceram. Soc., 1967 , No. 7, pp.81 -98 .

4. Effect of Oxygen Impurities on the Nitridation of High-Purity Silicon

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1. Oxygen Content in ß-Si3N4 Crystal Lattice;Journal of the American Ceramic Society;2004-12-21

2. Middle Stage Heat Treatment for Microstructure Control of Reaction-Bonded Silicon Nitride-Silicon Carbide Composite.;Journal of the Ceramic Society of Japan;2000

3. Thermal Routes to Ultrathin Oxynitrides;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998

4. Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760–1050 °C;Applied Physics Letters;1997-11-17

5. Effect of Iron, Titanium, and Hafnium on Second-Stage Nitriding of Silicon;Journal of the American Ceramic Society;1981-09

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