Atomic Beam Modifications of Insulator Surfaces
Author:
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1151-2916.1993.tb03781.x/fullpdf
Reference24 articles.
1. Preparation and Properties of Thin Film Boron Nitride
2. Effect of Growth Parameters on the CVD of Boron Nitride and Phosphorus‐Doped Boron Nitride
3. The Chemical Deposition of Boron‐Nitrogen Films
4. Study of boron nitride gate insulators onto InP grown by low‐temperature chemical vapor deposition
5. Formation of cubic boron nitride films by boron evaporation and nitrogen ion beam bombardment.
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1. Characterization of Thin Films and Coatings;Handbook of Deposition Technologies for Films and Coatings;2010
2. Fast (tens to hundreds of eV) neutral beams for materials processing;Journal of Physics D: Applied Physics;2008-01-04
3. Characterization of TiAlN thin film annealed under O2 byin situtime of flight direct recoil spectroscopy/mass spectroscopy of recoiled ions andex situx-ray photoelectron spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-07
4. Cryogenic deposition of carbon nitride films using a neutralized atomic nitrogen beam;Thin Solid Films;2001-01
5. Structure Determination of the Two-Domain (1×4) AnataseTiO2(001)Surface;Physical Review Letters;2000-04-10
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