Effects of Wet Oxidation on the Properties of Sub-10-nm-Thick Silicon Nitride Films

Author:

Lee Eun Gu,Im Ho Bin,Roh Jae Sung

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Reference48 articles.

1. 1R. Moazzami, J. Lee, I. C. Chen, and C. Hu , "Projecting the Minimum Acceptable Oxide Thickness for Time-Dependent Dielectric Breakdown ," Tech. Dig. Int. Electron. Devices Meet., 710 -13 (1988 ).

2. Advantages of Thermal Nitride and Nitroxide Gate Films in VLSI Process

3. Thermal Nitridation of SiO2 Thin Films on Si at 1150°C

4. Thermal nitridation of Si and SiO2for VLSI

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Surface characterization of nitrides and oxynitrides of groups IIIA and IVA;Journal of the European Ceramic Society;1997-01

2. Some preliminary observations of the rapid thermal oxidation of porous silicon, and the rapid thermal nitriding of oxidized porous silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-05

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