Author:
Lee Eun Gu,Im Ho Bin,Roh Jae Sung
Subject
Materials Chemistry,Ceramics and Composites
Reference48 articles.
1. 1R. Moazzami, J. Lee, I. C. Chen, and C. Hu , "Projecting the Minimum Acceptable Oxide Thickness for Time-Dependent Dielectric Breakdown ," Tech. Dig. Int. Electron. Devices Meet., 710 -13 (1988 ).
2. Advantages of Thermal Nitride and Nitroxide Gate Films in VLSI Process
3. Thermal Nitridation of SiO2 Thin Films on Si at 1150°C
4. Thermal nitridation of Si and SiO2for VLSI
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