Formation of Si 3 N 4 coating on SiC substrate by gas transporting self‐propagating high‐temperature synthesis with the addition of NH 4 Cl-Reference-Cited by-同舟云学术

Formation of Si 3 N 4 coating on SiC substrate by gas transporting self‐propagating high‐temperature synthesis with the addition of NH 4 Cl

Author:

Tian Zhaobo¹²^ORCID,Du Songmo¹,Cui Wei¹³,Zhang Jie¹,Li Fei¹,Chen Zhanglin¹,Chen Kexin¹,Liu Guanghua¹

Affiliation:

1. State Key Laboratory of New Ceramics and Fine Processing Tsinghua University Beijing China

2. Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials Tsinghua Shenzhen International Graduate School Shenzhen China

3. Foshan (Southern China) Institute for New Materials Foshan Guangdong China

Funder

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

Reference22 articles.

1. Progress of technologies and applications of ceramic substrate for the packaging of power electronics;Cheng H;Electron Compon Mater,2016

2. Research progress in alumina ceramics substrate material for electronic packaging;Liu B;Chin J Nonferrous Met,2011

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