Proposal of High Current Gain Vibrating-Body Field-Effect Transistor-Reference-Cited by-同舟云学术

Proposal of High Current Gain Vibrating-Body Field-Effect Transistor

Published:2013 Issue:11 Volume:133 Page:332-336
ISSN:1341-8939
Container-title:IEEJ Transactions on Sensors and Micromachines
language:en
Short-container-title:IEEJ Trans. SM

Author:

Ueki Shinji¹²,Nishimori Yuki¹,Miwa Kazuhiro¹,Nakagawa Shinya³,Imamoto Hiroshi¹⁴,Kubota Tomohiro¹⁵,Sugiyama Masakazu¹⁶,Samukawa Seiji¹⁵,Hashiguchi Gen¹⁷

Affiliation:

1. BEANS Project 3D BEANS Center

2. ASAHI GLASS CO., LTD. Electronics Business Planning Office Strategic Planning Gr.

3. OMRON Corporation Device Solutions Development Sec, Product & Technology Development Dept, Micro Devices

4. OMRON Corporation PMEMS Project

5. Tohoku University

6. The University of Tokyo

7. Shizuoka University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

https://www.jstage.jst.go.jp/article/ieejsmas/133/11/133_332/_pdf

Reference6 articles.

1. (1) D. Grogg, D. Tsamados, N. D. Badila, and A. M. Ionescu: “INTEGRATION OF MOSFET TRANSISTORS IN MEMS RESONATORS FOR IMPROVED OUTPUT DETECTION”, Transducers and Eurosensors 2007, p. 1709-1712 (2007)

2. (2) S. Ueki, Y. Nishimori, H. Imamoto, T. Kubota, K. Kakushima, T. Ikehara, M. Sugiyama, S. Samukawa, and G. Hashiguchi: “Modeling of the Vibrating-Body Field Effect Transistors based on Electro-Mechanical Interaction between Gate and Channel”, IEEE Trans. Electron Devices, Vol. 59, No. 8, p. 2235 (2012)

3. (3) S. M. Sze: Physics of Semiconductor Devices, 2nd ed., Wiley-Interscience (1981)

4. (5) Y. Nishimori, H. Ooiso, S. Mochizuki, N. Fujiwara, T. Tsuchiya, and G. Hashiguchi: “A multiple Degrees of Freedom Equivalent Circuit for a Comb-Drive Actuator”, Jpn. J. Appl. Phys. 48 124504 (2009)