Spalling Technology of PZT Thin Film Capacitor using Internal Stress
Author:
Affiliation:
1. The University of Tokyo
2. National Institute of Advanced Industrial Science and Technology
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
https://www.jstage.jst.go.jp/article/ieejsmas/134/4/134_85/_pdf
Reference14 articles.
1. (1) K. Iimura, T. Hosono, M. Ichiki, T. Itoh, and T. Suga : “A Release Property of High-Permittivity Thin Film Manufactured with Nano-Transfer Method”, Transactions of The Japan Institute of Electronics Packaging, Vol. 4, No. 1, pp. 36-39 (2011)
2. (2) T. Hosono, K. Iimura, M. Ichiki, T. Itoh, and T. Suga : “An Electrode Structure for Ferroelectric Thin Films and Its Application to the Nanotransfer Method”, Transactions of The Japan Institute of Electronics Packaging, Vol. 4, No. 1, pp. 40-43 (2011)
3. (4) F. Honda, T. Hosono, M. Fujino, T. Suga, M. Ichiki, and T. Itoh : “Relationship between Diffusion and Adhesion Properties of Ferroelectric Thin-Film Structure on Releasable Substrate”, Japanese Journal of Applied Physics, Vol. 52, 06GL16 (2013)
4. (5) G. Vasta, T. J. Jackson, and E. Tarte : “Electrical properties of BaTiO3 based ferroelectric capacitors grown on oxide sacrificial layers for micro-cantilevers applications”, Thin Solid Films, Vol. 520, pp. 3071-3078 (2012)
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