Transfer of Ferroelectric Thin Film Capacitor Using Internal Stress of Plated Film-Reference-Cited by-同舟云学术

Transfer of Ferroelectric Thin Film Capacitor Using Internal Stress of Plated Film

Published:2021-02-01 Issue:2 Volume:141 Page:39-43
ISSN:1341-8939
Container-title:IEEJ Transactions on Sensors and Micromachines
language:en
Short-container-title:IEEJ Trans. SM

Author:

Sueshige Kazutaka¹,Fujino Masahisa²,Suga Tadatomo³,Ichiki Masaaki²

Affiliation:

1. Canon Inc.

2. National Institute of Advanced Industrial Science and Technology (AIST)

3. The University of Tokyo

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

https://www.jstage.jst.go.jp/article/ieejsmas/141/2/141_39/_pdf

Reference9 articles.

1. (1) K. Iimura, T. Hosono, M. Ichiki, T. Itoh, and T. Suga : “A Release Property of High-Permittivity Thin Film Manufactured with Nano-Transfer Method”, Transactions of The Japan Institute of Electronics Packaging, Vol. 4, No. 1, pp. 36-39 (2011)

2. (2) F. Honda, T. Hosono, M. Fujino, T. Suga, M. Ichiki, and T. Itoh : “Relationship between Diffusion and Adhesion Properties of Ferroelectric Thin-Film Structure on Releasable Substrate”, Japanese Journal of Applied Physics, Vol. 52, 06GL16 (2013)

3. (3) E. Komine, M. Ozaki, T. Suga, M. Ichiki, and T. Itoh : “Fabrication and Characterization of Ferroelectric PZT and BaTiO3 Thin Films on Releasable Electrode Structures”, Transactions of The Japan Institute of Electronics Packaging, Vol. 5, No. 1, pp. 34-40 (2012)

4. (4) G. Vasta, T. J. Jackson, and E. Tarte : “Electrical properties of BaTiO3 based ferroelectric capacitors grown on oxide sacrificial layers for micro-cantilevers applications”, Thin Solid Films, Vol. 520, pp. 3071-3078 (2012)

5. (5) A. Bansal, R. Hergert, G. Dou, R. V. Wright, D. Bhattacharyya, P. B. Kirby, E. M. Yeatman, and A. S. Holmes : “Laser transfer of sol-gel ferroelectric thin films using an ITO release layer”, Microelectronic Engineering, Vol. 88, pp. 145-149 (2011)