Stress Control of AlN Thin Film Sputter-Deposited Using ECR Plasma-Reference-Cited by-同舟云学术

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Stress Control of AlN Thin Film Sputter-Deposited Using ECR Plasma

Published:2010 Issue:11 Volume:130 Page:523-527
ISSN:1341-8939
Container-title:IEEJ Transactions on Sensors and Micromachines
language:en
Short-container-title:IEEJ Trans. SM

Author:

Hino Ryunosuke¹,Matsumura Takeshi¹²,Esashi Masayoshi³,Tanaka Shuji¹

Affiliation:

1. Graduate School of Engineering, Tohoku University

2. New Generation Wireless Research Center, National Institute of Information and Communications Technology

3. World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

https://www.jstage.jst.go.jp/article/ieejsmas/130/11/130_11_523/_pdf

Reference14 articles.

1. (1) T. Amazawa, H. Oikawa, S. Hirono, and S. Matsuo : “Deposition of High Quality Thin Films Using ECR Plasma”, J. Jpn. Soc. Precis. Eng., Vol. 66, No. 4, pp. 511-516 (2000) (in Japanese)

2. (2) H. Windischmann : “Intrinsic Stress in AlN Prepared by Dual-Ion-Beam Sputtering”, Thin Solid Films, Vol. 154, pp. 159-170 (1987)

3. (3) G. Este and W. D. Westwood : “Stress control in reactively sputtered AlN and TiN film”, J. Vac. Sci. Technol. A, Vol. 5, No. 4, pp. 1892-1897 (1987)

4. (4) K. Kusaka, T. Ao, T. Hanabusa, and K. Tominaga : “Effect of external magnetic field on c-axis orientation and residual stress in AlN film”, Thin Solid Film, Vol. 332, pp. 247-251 (1998)

5. (5) K. Kusaka, D. Taniguchi, T. Hanabusa, and K. Tominaga : “Effect of input power on crystal orientation and residual stress in AlN film deposited by dc sputtering”, Vacuum, Vol. 59, pp. 806-813 (2000)

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1. Effects of crystal orientation, substrate type, and substrate temperature on residual stress of AlN thin films deposited by different deposition methods;Journal of the Korean Physical Society;2024-02-22

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