Double Injection Type Magnetodiode Formed on a SOI Substrate
Author:
Affiliation:
1. Tohoku-Gakuin Univ.
2. Tokin Corporation
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
https://www.jstage.jst.go.jp/article/ieejsmas/122/5/122_5_280/_pdf
Reference5 articles.
1. GMR in Co-Fe/Cu Multilayers Fabricated under Sputtering Atmosphere with a Small Oxygen Impurity Introduced.
2. Tunnel Magnetoresistance Effect for Double Tunnel Junctions with Al Intermediate Layer.
3. [6] M.A. Lampert and A. Rose: “Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma Case”, Phys. Rev., Vol. 121, pp. 26-37 (1961)
4. [7] R.B. Schiling and M.A. Lampert: ”Plasma Injected into Solids: Analytic Study of the Diffusion Corrections”, J. Appl. Phys., Vol. 41, pp. 1791-1798 (1970)
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