Quantum Confinement and Piezoresistivity Simulation in 3C-SiC Nanosheet
Author:
Affiliation:
1. Center for the Promotion of Interdisciplinary Education and Research (C-PiER), Kyoto University
2. Department of Materials Science and Engineering, Egypt-Japan University of Science and Technology (E-JUST)
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
https://www.jstage.jst.go.jp/article/ieejsmas/136/11/136_465/_pdf
Reference33 articles.
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2. (2) S. Saito, D. Hisamoto, H. Shimizu, H. Hamamura, R. Tsuchiya, Y. Matsui, T. Mine, T. Arai, N. Sugii, K. Torii, S. Kimura, and T. Onai : “Silicon light-emitting transistor for on-chip optical interconnection”, Appl. Phys. Lett., Vol. 89, No. 16, pp. 163504-1-163504-3 (2006)
3. (3) L. T. Canham : “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers”, Appl. Phys. Lett., Vol. 57, No. 10, pp. 1046-1048 (1990)
4. (4) Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda : “Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shell”, Phys. Rev. B, Vol. 48, No. 7, pp. 4883-4886 (1993)
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