100 m-level Spiral Silicon Micro-Trenches with 3-Step Smooth Sidewalls to Deposit Superconducting Material for Miniaturized Magnetic Energy Storage
Author:
Affiliation:
1. Toyota Technological Institute
2. Materials and Surface Engineering Research Institute, Kanto Gakuin University
3. Institutes of Innovation for Future Society, Nagoya University
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
https://www.jstage.jst.go.jp/article/ieejsmas/142/5/142_78/_pdf
Reference21 articles.
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2. (2) 江本邦幹・奥山憲昭:「瞬時電圧低下が及ぼす事業中断リスク」, NKSJリスクマネジメントレポート, NKSJ Risk Management Inc. (2010)
3. (3) 「東芝の工場が瞬間停電で操業停止, NAND出荷量最大2割減も」, ロイター (2010)
4. (4) S. Nomura, T. Shintomi, S. Akita, T. Nitta, R. Shimada, and S. Meguro : “Technical and cost evaluation on SMES for electric power compensation”, IEEE Trans. Appl. Superconductivity, Vol. 20, No. 3, pp. 1373-1378 (2010)
5. (5) T. Motohiro, M. Sasaki, J.-H. Noh, O. Takai, and H. Honma : “Estimation of Electricity Storage Density of Compact SMESs Composed of Si-wafer Stacks Loaded with Superconducting Thin Film Coils in Spiral Trenches under the Constraints of the Critical Magnetic Flux Density”, J. Phys.: Conf. Series, Vol. 1590, No. 012045 (2020)
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