Electric Properties of the ITO-ZnSe-CdTe-ZnTe Photo Sensor Cell-Reference-Cited by-同舟云学术

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Electric Properties of the ITO-ZnSe-CdTe-ZnTe Photo Sensor Cell

Published:2006 Issue:12 Volume:126 Page:655-661
ISSN:1341-8939
Container-title:IEEJ Transactions on Sensors and Micromachines
language:en
Short-container-title:IEEJ Trans. SM

Author:

Ichibakase Tsuyoshi¹

Affiliation:

1. Oshima National College of Maritime Tech.

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

http://www.jstage.jst.go.jp/article/ieejsmas/126/12/126_12_655/_pdf

Reference15 articles.

1. (2) 藤原•江口•芹沢•深井;「高感度撮像管“ニュービコン”の特性について」,テレビ学会電子装置研資,第153号

2. (3) R. L. Anderson : “Germanium Gallium Arsenide Contacts”, Ph. D. Thesis, Syracuse Univ., Syracuse, New York (1960)

3. (4) R. L. Anderson : “Junctions between Ge and GaAs”, Proc. Int. Conf. Semicond., Prague, (Czech. Acad. Sci.), p. 563 (1960)

4. Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric Field Analysis of the ITO-ZnSe-CdTe Photo Sensor Cell;IEEJ Transactions on Sensors and Micromachines;2009

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