Development of Pressure Sensors for High Temperature Operation-Reference-Cited by-同舟云学术

Development of Pressure Sensors for High Temperature Operation

Published:2004 Issue:5 Volume:124 Page:183-189
ISSN:1341-8939
Container-title:IEEJ Transactions on Sensors and Micromachines
language:en
Short-container-title:IEEJ Trans. SM

Author:

Yoshitake Masaaki¹,Nosaka Toshikazu¹,Kusaka Tadaoki¹,Suzuki Yoshihiko¹,Takenaka Hiroshi²,Sawamura Mikio²

Affiliation:

1. Technology Research Institute of Osaka Prefecture

2. Nippon Liniax Co., LTD.

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

https://www.jstage.jst.go.jp/article/ieejsmas/124/5/124_5_183/_pdf

Reference4 articles.

1. (2) Y. Nagura, C. Hao, Y. Onuma, K. Kamiura, and S. Yonekubo : “Preparation of SiC-Si Films for Pressure Sensor Used at High Temperature”, Technical Digest of the 10th Sensor Symposium, p. 125 (1991)

2. (3) K. Ishii, N. Tawaragi, I. Inamura, Y. Yuzuki, and M. Araragi : “High Temperature Pressure Sensor Using ZMR-SOI Structure”, Technical Digest of the 11th Sensor Symposium, p. 131 (1992)

3. (4) Y. Suzuki, H. Takenaka, T. Nosaka, and S. Ogawa : “CrOx Thin Film Pressure Sensor Prepared Directly on The Stainless Steel Diaphragm”, Technical Digest of the 12^th Sensor Symposium, pp. 151-154 (1994)

4. (7) M. Nagasaka : “Oxidation of Metals under Low Pressure Oxygen”, Boshoku Gijutsu, Vol. 24, pp. 193-204 (1975) (in Japanese)

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