Non-uniformity in the Electrical Properties of Aluminum Added Silicon Carbide Ceramics
Author:
Affiliation:
1. Fukuyama Polytechnic College
2. The polytechnic University
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering,Mechanical Engineering
Link
https://www.jstage.jst.go.jp/article/ieejsmas/122/1/122_1_42/_pdf
Reference7 articles.
1. 1) T. Terashige and K. Okano, “Electrical conductivity of aluminum added SiC ceramic and its Application to Thermistor”, Trans. IEE. Japan, vol. 118-A, pp. 402-407, Apr. 1998.
2. 2) T. Terashige and K. Okano, “Influence of nonuniform microstructure of SiC ceramic semiconductor on its electrical conductivity”, J. Ceram. Soc. Japan, vol. 105, pp. 381-384, May 1997.
3. 3) T. Terashige, N. Ishimoto and K. Okano, “The effects of sintering temperature on electrical characteristics of SiC ceramic thermistor”, Trans. IEE. Japan, vol. 118-E, pp. 401-406, Sep. 1998.
4. 4) T. Terashige and K. Okano, “Influence of microstructural variation on the electrical properties of SiC microthermistors”, IEEE Trans. Electron Devices, vol. 46, pp. 555-560, Mar. 1999.
5. 5) K. Okano, K. Kurashima and Y. Kobayashi, “Design of SiC ceramics thermistor using an artificial intelligence”, Trans. IEE. Japan, vol. 112-C, pp. 819-827, Dec. 1992.
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