Effects of He Ambient on Formation of Si Particles Using Pulsed Ion-Beam Evaporation
Author:
Affiliation:
1. Surface Engineering Laboratory, School of Materials Science and Engineering, Dalian University of Technology
2. Extreme Energy-Density Research Institute, Nagaoka University of Technology
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
http://www.jstage.jst.go.jp/article/ieejfms/126/9/126_9_915/_pdf
Reference15 articles.
1. Silicon-based visible light-emitting devices integrated into microelectronic circuits
2. A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel
3. Preparation of polycrystalline silicon thin films by pulsed ion-beam evaporation
4. Defect-related photoluminescence of silicon nanoparticles produced by pulsed ion-beam ablation in vacuum
5. Characterization of a high-intensity bipolar-mode pulsed ion source for surface modification of materials
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