Fine Surface Processing of LiNbO3 Crystal Etched without Mask Using Fluorine System Gas Plasma RIE
Author:
Affiliation:
1. Department of Electronics, Doshisha University
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejfms/126/8/126_8_830/_pdf
Reference6 articles.
1. (1) O. Mitomi, K. Noguchi, and H. Miyazawa : “Design of Ultra Broad-Band LiNbO3 optical Modulators with Ridge Structure”, IEEE Trans. Micro Tech., Vol. 43, pp. 2203-2207(1995)
2. (2) S. Matui, T. Yamano, H. Aritone, and S. Namba : “Microfabrication of LiNbO3 by Reactive Ion-beam Etching”, Jpn J. Appl. Phys., Vol. 19, pp. L463-L465 (1980)
3. (3) T. Ohta, R. Matui, and S. Yoshikado : “Dry Etching Characteristic of LiNbO3 in Plasma”, T. IEE Japan, Vol. 118-E, No. 2, pp. 425-430 (1998-2) (in Japanese)
4. (4) T. Nishimura, T. Ohta, and S. Yoshikado : “Etching Characteristic of LiNbO3 Crystal in Fluorine System Gas Plasma RIE”, T. IEE Japan, Vol. 120-A, No. 2, pp. 198-203 (2000-2) (in Japanese)
5. (5) M. Tamura and S. Yoshikado : “Etching Characteristic of LiNbO3 Crystal by Fluorine Gas Plasma Reactive Ion Etching”, Science & Technology Advanced Materials, Vol. 2, pp. 563-569 (2001)
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