Dependence of Ablation Thresholds for Silicon on Laser Incident Angle
Author:
Affiliation:
1. Graduate School of Engineering, Osaka Sangyo University
2. RIST, Tokai University
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejfms/143/10/143_314/_pdf
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3. (3) P. Vitanov, M. Kamenova, N. Tyutyundzhiev, M. Delibasheva, E. Goranova, and M. Peneva : “Hgh-efficiency solar cell using a thin porous silicon layer”, Thin Solid Films, Vol. 297, pp. 299-303 (1997)
4. (4) Y. E. B. Vidhya and N. J. Vasa : “Enhancement in Photoconductivity of a-Si Thin Films by Annealing and Texturing Technique with the Third Harmonic Output from a Pulsed Nd3+;YAG Laser”, Proc. Manufact., Vol. 5, pp. 734-746 (2016)
5. (5) 篠原 亘：「結晶シリコン太陽電池において利用されるレーザー技術」, レーザー研究, Vol. 47, pp. 137-141 (2019)
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