Investigation of Fabrication Conditions for VO2 Thin Films by MOD using Carbon Thermal Reduction

Author:

Fujishiro Yuhi1,Kawahara Masami2,Samura Tsuyoshi2,Tachiki Takashi1,Uchida Takashi1

Affiliation:

1. National Defense Academy

2. Kojundo Chemical Laboratory Co., Ltd.

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Reference22 articles.

1. (1) F. J. Morin : “Oxides which show a metal-to-insulator transition at the Neel temperature”, Phys. Rev. Lett., Vol. 3, pp. 34-36 (1959)

2. (2) J. F. De Natale, P. J. Hood, and A. B. Harker : “Formation and characterization of grain-oriented VO2 thin films”, J. Appl. Phys., Vol. 66, No. 12, pp. 5844-5850 (1989)

3. (3) Y. Wang, J. Chai, S. Wang, L. Qi, Y. Yang, and Y. Xu : “Electrical oscillation in Pt/VO2 bilayer strips”, J. Appl. Phys., Vol. 117, 064502 (2015)

4. (4) B. Chae, H. Kim, D. Youn, and K. Kang : “Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse”, Physica B, Vol. 369, pp. 76-80 (2005)

5. (5) B. Wang, J. Lai, H. Li, H. Hu, and S. Chen : “Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer”, Infrared Phys. & Tech., Vol. 57, pp. 8-13 (2013)

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