Deposition of Boron Nitride Films using RF Plasma CVD Method-Reference-Cited by-同舟云学术

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Deposition of Boron Nitride Films using RF Plasma CVD Method

Published:2014 Issue:6 Volume:134 Page:397-401
ISSN:0385-4205
Container-title:IEEJ Transactions on Fundamentals and Materials
language:en
Short-container-title:IEEJ Trans. FM

Author:

Inao Takuro¹,Kumadaki Masahiko¹,Satoh Kohki¹²,Yoshino Masaki³,Itoh Hidenori¹

Affiliation:

1. Division of Information and Electronic Engineering, Graduate School of Engineering, Muroran Institute of Technology

2. Center of Environmental Science and Disaster Mitigation for Advanced Reserch, Muroran Institute of Technology

3. Department of Electronic and Information Technology, Hokkaido Polytechnic College

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/ieejfms/134/6/134_397/_pdf

Reference13 articles.

1. (1) T. Taniguchi, K. Watanabe, and A. Nakayama : “High Pressure Synthesis of Boron Nitride Single Crystals”, Rev. High Sci. & Technol., Vol. 15, No. 4, pp. 284-291 (2005) (in Japanses)

2. (3) H. Saitoh, J. Satoh, T. Ishiguro, K. Kamata, and Y. Ichinose : “Hard Amorphous Boron Nitride Films Prepared by Plasma CVD Technique”, J. Jpn Inst. Metals, Vol. 60, No. 5, pp. 476-481 (1996) (in Japanese)

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