Analysis of the Generating Action of the Acid from PAG using Acid Sensitive Dyes for EUV Resist

Author:

Sekiguchi Atsushi1

Affiliation:

1. Litho Tech Japan Corporation

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Reference24 articles.

1. (1) C.-T. Lee, W. Yueh, J. M. Roberts, T. R. Younkin, and C. L. Henderson : “A New Technique for Studying Photoacid Generator Chemistry and Physics in Polymer Films using On-Wafer Ellipsometry and Acid-Sensitive Dyes”, Proc. SPIE, Vol. 6923, p. 44 (2009)

2. (2) C.-T. Lee, M. Wang, K. E. Gonsalves, W. Yueh, J. M. Roberts, T. R. Younkin, and C. L. Henderson : “Effect of PAG and Matrix Structure on PAG Acid Generation Behavior under UV and High-Energy Radiation Exposure”, Proc. SPIE, Vol. 6923, p. 97 (2009)

3. (3) J. F. Cameron, N. Chan, K. Moore, and G. Pohlers : “Comparison of acid-generating efficiencies in 248 and 193-nm photoresists”, Proc. SPIE, Vol. 4345, pp. 106-117 (2001)

4. (4) A. R. Pawloski, C. R. Szmanda, and P. F. Nealey : “Evaluation of the standard addition method to determine rate constants for acid generation in chemically amplified photoresist at 157nm”, Proc. SPIE, Vol. 4345, pp. 1056-1065 (2001)

5. (5) T. Itani, H. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama : “Relationship between Remaining Solvent and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists”, Jpn. J. Appl. Phys., Vol. 35, pp. 6501-6505 (1996)

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