Evaluation of the Characters of a-SiC:H Films Deposited by RF Plasma CVD Technique-Reference-Cited by-同舟云学术

Evaluation of the Characters of a-SiC:H Films Deposited by RF Plasma CVD Technique

Published:2005 Issue:2 Volume:125 Page:133-137
ISSN:0385-4205
Container-title:IEEJ Transactions on Fundamentals and Materials
language:en
Short-container-title:IEEJ Trans. FM

Author:

Sasaki Atsushi¹²,Niwamoto Yuji¹³,Itoh Hidenori¹,Sato Kohki¹,Tagashira Hiroaki¹

Affiliation:

1. Depertment of Electrical and Electronic Engineering, Murorn Institute of Technology

2. Kushiro National Collage of Technology

3. Mitsubishi Electric Corporation

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

http://www.jstage.jst.go.jp/article/ieejfms/125/2/125_2_133/_pdf

Reference7 articles.

1. Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane

2. (3) H. Itoh, Y. Echigo, K. Satoh, M. Shimozuma, Y. Nakao, and H. Tagashira: “Deposition of a-SiC: H Films by using Tetramethylsilane and Hydrogen”, 15th International Symposium on Plasma Chemistry, Vol. 5, pp. 1793-1797 (2001)

3. (4) Y. Niwamoto H. Itoh, K. Satoh, Y. Nakao, and H. Tagashira: “SiC films deposited by the plasma CVD method and assessment of films”, The Paper of Technical Meeting on Electrical Discharges, IEE Japan, ED-02-92, pp. 37-42 (2002) (in Japanese)

4. 庭本裕司·伊藤秀範·佐藤孝紀·中尾光夫·田頭博昭:「プラズマCVD法によりSiC膜堆積と膜評価」, 電気学会放電研資,ED-02-92, pp. 37-42 (2002)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Measurement of electron transport coefficients in tetramethylsilane vapour;Journal of Physics D: Applied Physics;2005-06-03