1. (1) C. H. Lin, R. Abe, T. Maruyama, and S. Naritsuka : “Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal-organic beam epitaxy”, J. Crystal Growth, Vol. 318, pp. 446-449 (2011)
2. (2) C. H. Lin, R. Abe, S. Uchiyama, Y. Uete, T. Maruyama, and S. Naritsuka : “Effect of growth temperature on surface morphology of selectively grown GaN layers by ammonia-based metal-organic molecular beam epitaxy”, 16th European Molecular Beam Epitaxy Workshop, MoP12 Alpe d'Huez, France (2011-3)
3. (3) S. Naritsuka, M. Mori, Y. Takeuchi, Y. Monno, and T. Maruyama : “XPS study of nitridation mechanism of GaAs (001) surface by RF-radical source”, Phys. Status Solidi (C), Vol. 8, pp. 291-293 (2011)
4. (4) T. Yodo, Y. Shiraishi, K. Hirata, H. Tomita, N. Nisie, H. Horibe, K. Iwata, and Y. Harada : “Influences of nitrogen plasma on crystalline quality of GaN films grown on Si(111) substrates at low-temperatures by electron cyclotron resonance plasma-assisted molecular-beam epitaxy”, IEICE Technical Report ED2006-160, CPM2006-97, LQE2006-64, pp. 45-49 (2006-10)
5. Basic Study on Surface Treatment of Functional Resin Film by Pulsed Atmospheric Microplasma