A Bi-Directional Isolated DC/DC Converter as a Core Circuit for 3.3-kV/6.6-kV Power Conversion Systems in the Next Generation-Reference-Cited by-同舟云学术

A Bi-Directional Isolated DC/DC Converter as a Core Circuit for 3.3-kV/6.6-kV Power Conversion Systems in the Next Generation

Published:2006 Issue:3 Volume:126 Page:211-217
ISSN:0913-6339
Container-title:IEEJ Transactions on Industry Applications
language:en
Short-container-title:IEEJ Trans. IA

Author:

Inoue Shigenori¹,Akagi Hirofumi¹

Affiliation:

1. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering

Link

https://www.jstage.jst.go.jp/article/ieejias/126/3/126_3_211/_pdf

Reference11 articles.

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2. (3) H. -R. Chang, E. Hanna, and A. V. Radun: “Development and demonstration of silicon carbide (SiC) motor drive inverter modules”, IEEE PESC'03, Vol. 1, pp. 211-216 (2003)

3. (4) G. Majumdar: “The status quo and future trends of power devices”, The Paper of Technical Meeting on Semiconductor Power Converter, IEEJ, SPC-05-01, pp. 1-6 (2005)

4. (5) M. Kawai and C. Horikiri: “The invisible strength of power control semiconductors”, Nikkei Electronics, 2005. 2. 14, No. 893, pp. 79-97 (2005)

5. (6) S. Harada, M. Kato, M. Okamoto, T. Yatsuo, K. Fukuda, and K. Arai: “4.3mΩcm², 1100V normally-off IE-MOSFET on SiC”, The Paper of Joint Technical Meeting on Electron Devices and Semiconductor Power Converter, IEE Japan, EDD-05-49/SPC-05-74, pp. 27-31 (2005) (in Japanese)

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