1. (1) http://www2.iee.or.jp/ver2/honbu/30-foundation/data07/press/press3-all.pdf
2. (2) http://www.ieee.org/about/awards/tfas/newell.html
3. (3) “Power Semiconductor Devices Driving the World”, IEEJ, The Book Plan Editing Committee of IGBT (Dec. 25, 2008) (in Japanese)
4. (4) H. W. Becke and C. F. Wheatley: “Power MOSFET with an Anode Region”, US Pat. 4364073 (Dec. 14, 1982)
5. (5) B. J. Baliga, M. S. Adler, P. V. Gray, R. P. Love, and N. Zommer: “The Insulated Gate Rectifier (IGR): A New Power Switching Device”, Tech. Dig. IEDM'82, pp. 264-267 (Dec. 14, 1982)