Mechanisms of Concurrent SiO Desorption with Oxide Layer Formation at Si(001) Surface
Author:
Affiliation:
1. Quantum Beam Science Directorate, Japan Atomic Energy Agency
2. Graduate. School of Engineering, Hyogo University
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejeiss/127/2/127_2_133/_pdf
Reference20 articles.
1. (1) T. Uda and K. Kato : “Theory of Initial Oxidation Processes on Si Surface”, Journal of the Surface Science Society of Japan, Vol. 19, No. 3, pp. 173-178 (1998) (in Japanese)
2. Theoretical Studies on Surface Electronics States. Theory of Initial Oxidation Processes on Si Surface.
3. (2) Y. Teraoka and A. Yoshigoe : “Precise Control of Si(001) Initial Oxidation by Translational Kinetic Energy of O2 Moleculaes”, Jpn. J. Appl. Phys., Vol. 41, Part 1, No. 6B, pp. 4253-4260 (2002)
4. (3) Y. Teraoka, K. Moritani, and A. Yoshigoe : “Coexistence of passive and active oxidation for O2/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy”, Appl. Surf. Sci., Vol. 216, pp. 8-14 (2003)
5. (4) Y. Teraoka, A. Yoshigoe, and K. Moritani : “SiO Mass Spectrometry and Si-2p Photoemission Spectroscopy for the Study of Oxidation Reaction Dynamics of Si(001) Surface by Supersonic O2 Molecular Beams under 1000 K”, Jpn. J. Appl. Phys., Vol. 42, Part 1, No. 7B, pp. 4671-4675 (2003)
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