Selective X-Ray Analyses of Electron Localizing Sites Using Capacitance or Electrostatic Force
Author:
Affiliation:
1. National Institute for Materials Science (NIMS)
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
http://www.jstage.jst.go.jp/article/ieejeiss/127/9/127_9_1334/_pdf
Reference17 articles.
1. (1) 例えばS. M. Sze著,南日康夫.長谷川文夫.川辺光央 訳:「半導体デバイス—基礎理論とプロセス技術」,産業図書 (2004)
2. (2) M. Ishii, K. Ozasa, and Y. Aoyagi : “Selective X-ray Absorption Spectroscopy of Self-Assembled Atom in InAs Quantum Dot”, Microelec. Eng., Vol. 67-68, pp. 955-962 (2003)
3. Site-selective x-ray absorption fine structure: Selective observation of Ga local structure in DX center of Al0.33Ga0.67As:Se
4. (4) M. Ishii and A. Nakao : “X-ray absorption fine structure measurement using parallel plate capacitor: Observation of surface electronic states of metals”, Rev. Sci. Instrum., Vol. 76, 123905 (2005)
5. (5) M. Ishii, N. Rigopoulos, N. Poolton, and B. Hamilton : “X-ray absorption microspectroscopy using Kelvin force microscopy with x-ray source”, Physica B, Vol. 376, pp. 950-954 (2006)
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