Affiliation:
1. Kurume National College of Technology
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Reference4 articles.
1. (1) Y. Osada : “Electron transport simulation in silicon based on analytic band model”, IEEJ Trans. Electronics, Information and Systems, Vol. 131, No. 2, pp. 480-481 (2011)
2. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
3. (3) C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, and A. Alberigi-Quaranta : “Electron drift velocity in silicon”, Phys. Rev. B, Vol. 12, No. 4, pp. 2265-2284 (1975)
4. Effects of band non-parabolicity on electron drift velocity in silicon above room temperature
Cited by
1 articles.
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