Development of Low On-Resistance and Low Reverse Recovery Charge Power MOSFET for Large-Capacity Communication Systems

Author:

Kaneko Atsushi1,Kachi Tsuyoshi1,Kaganoi Keisuke1,Nishiwaki Tatsuya1

Affiliation:

1. Toshiba Electronic Devices & Storage Corporation

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Reference7 articles.

1. (1) 加賀野井啓介・新井雅俊・可知 剛:「次世代大容量通信用電源向け低耐圧パワーMOSFET技術」, 東芝レビュー, Vol. 75, No. 6, pp. 9-13 (2020)

2. (2) R. K. Williams, M. N. Darwish, R. A. Blanchard, R. Siemieniec, P. Rutter, and Y. Kawaguchi : “The Trench Power MOSFET: Part I—History, Technology, and Prospects”, IEEE Trans. on Electron Devices, Vol. 64, No. 3, pp. 674-691 (2017)

3. (3) M. A. Gajda, S. W. Hodgskiss, L. A. Mounfield, N. T. Irwin, G. E. J. Koops, and R. van Dalen.: “Industrialisation of Resurf Stepped Oxide Technology for Power Transistors”, Proc. of ISPSD2006, pp. 109-112 (2006)

4. (4) P. Goarin, G. E. J. Koops, R. van Dalen, C. Le Cam, and J. Saby : “Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge”, Proc. of ISPSD 2007, pp. 61-64 (2007)

5. (5) J. Appels and H. M. J. Vaes : “High voltage thin layer devices (RESURF devices)”, IEDM Tech. Dig., pp. 238-241 (1979)

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