弱反転動作を活用するMOSFETの伝達特性に関する研究-Reference-Cited by-同舟云学术

弱反転動作を活用するMOSFETの伝達特性に関する研究

Published:2023-12-01 Issue:12 Volume:143 Page:1154-1162
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Nishiyama Naoya¹,Matsui Fumiya¹,Sano Yuji¹

Affiliation:

1. Graduate School of Science and Engineering, Course of Electricity, Electronics and Communications, Toyo University

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/ieejeiss/143/12/143_1154/_pdf

Reference21 articles.

1. (1) M. Arai, Y. sano, and Y. Miyamoto : “Development of universal gamma collection IC composed of MOSFET operating in subthreshold region”, IEEJ Electronics, Information and Systems, PS1-5 (2018) (in Japanese)

2. 新井将広・佐野勇司・宮本侑育：「弱反転動作するMOSFETを用いた万能ガンマ補正ICの設計と試作」, 電学C部門大会研資, PS1-5 (2018)

3. (2) M. Arai and Y. Sano : “Exponentiation Conversion Circuit Capable of Changing the Power Exponent to Any Value”, IEEJ Transactions on Electronics, Information and Systems, Vol. 140, No. 1, pp. 24-31 (2020) (in Japanese)

4. 新井将広・佐野勇司：「べき指数を任意の値に変更でるべき乗変換回路」, 電学論C, Vol. 140, No. 1, pp. 24-31 (2020)

5. (3) N. Nishiyama, M. Arai, and Y. Sano : “Signal Dynamic Range Expansion in Exponentiation Conversion CMOS IC Composed of MOSFETs Operating in Subthreshold Region”, Papers of Technical Meeting on Electronic circuits, ECT-021-015, IEE Japan (2021) (in Japanese)