Red-Light High-Power Laser Diodes Fabricated by Molecular Beam Epitaxy
Author:
Affiliation:
1. Sharp Corporation.
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
http://www.jstage.jst.go.jp/article/ieejeiss/123/5/123_5_886/_pdf
Reference8 articles.
1. 150 mW fundamental-transverse-mode operation of 670 nm window laser diode
2. Strained Single-Quantum-Well AlGaInP Laser Diodes with Asymmetric Waveguiding Structure
3. Real index-guided AlGaInP visible laser with high-bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy
4. Optimum tensile-strained multiquantum-well structure of 630-nm band InGaAlP lasers for high temperature and reliable operation
5. InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy
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