Interface-State-Density Evaluation of p-type and n-type Ge/GeN<sub>x</sub> Structures by Conductance Technique-Reference-Cited by-同舟云学术

Interface-State-Density Evaluation of p-type and n-type Ge/GeN_x Structures by Conductance Technique

Published:2013 Issue:7 Volume:133 Page:1279-1284
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Iwasaki Takuro¹,Ono Toshiro¹,Otani Yohei²,Fukuda Yukio²,Okamoto Hiroshi¹

Affiliation:

1. Hirosaki University

2. Tokyo University of Science, Suwa

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/ieejeiss/133/7/133_1279/_pdf

Reference17 articles.

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2. (2) H. Shang, H. Okorn-Schimdt, J. Ott, P. Kozlowski, S. Steen, E. C. Jones, H.-S. P. Wong, and W. Hanesch : “Electrical characterization of germanium p-channel MOSFETs”, IEEE Electron Devices, Vol. 24, No. 4, pp. 242-244 (2003)

3. (3) A. Ritenour, S. Yu, M. L. Lee, N. Lu, W. Bai, A. Pitera, E. A. Fitzgerald, D. L. Kwong, and D. A. Antoniadis : “Epitaxial strained germanium p-MOSFETs with HfO₂ gate dielectrics and TaN gate electrode”, in IEDM Tech. Dig., pp. 433-436 (2003)

4. (4) D. S. Yu, C. H. Huang, A. Chin, C. Zhu, M. F. Li, B. J. Cho, D. L. Kwong, and D. A. Antoniadis : “Al₂O₃-Ge-on-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates”, IEEE Electron Devices, Vol. 25, No. 3, pp. 138-140 (2004)

5. (5) W. P. Bai, N. Lu, A. Ritenour, M. L. Lee, D. A. Antoniadis, and D. L. Kwong : “Ge n-MOSFETs on lightly doped substrates with high-k dielectric and TaN gate”, IEEE Electron Devices, Vol. 27, No. 3, pp. 175-178 (2006)