How Can We Monitor the Recovery of a Damaged Crystal by the Post Annealing?
Author:
Affiliation:
1. Graduate School of Science, Okayama University of Science
2. National Institute for Materials Science
3. Institut des Microtechnologies Appliquées Arc, Haute-Ecole Arc Ingénierie
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejeiss/134/4/134_479/_pdf
Reference23 articles.
1. (1) http://www.mext.go.jp/english/topics/1307728.htm
2. (2) A. Frangi, C. Cercignani, S. Mukherjee: N. Aluru (Eds.) : “Advances in Multiphysics Simulation and Experimental Testing of MEMS”, Imperial College Press, London (2008)
3. (3) http://www.itrs.net/links/2011ITRS/Home2011.htm
4. (4) http://geant4.cern.ch/
5. (5) S. T. Nakagawa : “Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization”, Chapter 3, Academic Press, Boston (1997)
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