InGaAs/AlGaAs Quantum Wire DFB Laser by One-Time Selective MOCVD on Ridge Substrate-Reference-Cited by-同舟云学术

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InGaAs/AlGaAs Quantum Wire DFB Laser by One-Time Selective MOCVD on Ridge Substrate

Published:2007 Issue:7 Volume:127 Page:985-989
ISSN:0385-4221
Container-title:IEEJ Transactions on Electronics, Information and Systems
language:en
Short-container-title:IEEJ Trans.EIS

Author:

Takasuka Yasuyuki¹,Yonei Kenji¹,Ogura Mutsuo²

Affiliation:

1. Shibaura Institute of Techonology

2. National Institute of Advanced Industrial Science and Technology

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering

Link

http://www.jstage.jst.go.jp/article/ieejeiss/127/7/127_7_985/_pdf

Reference6 articles.

1. InGaAs/GaAs strained quantum wire lasers grown by organometallic chemical vapor deposition on nonplanar substrates

2. Temperature dependent pohotoluminescence investigation of AlGaAs/GaAs quantum wires grown by flow rate modulation epitaxy

3. Purely gain‐coupled distributed feedback semiconductor lasers

4. Long wavelength InGaAsP/InP distributed feedback lasers grown by chemical beam epitaxy

5. 1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

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