High-Power 200mW AlGaInP Laser Diodes with low Operating Current
Author:
Affiliation:
1. Materials & Devices Development Center BU, SANYO Electric Co., Ltd.
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
http://www.jstage.jst.go.jp/article/ieejeiss/125/2/125_2_220/_pdf
Reference9 articles.
1. High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence
2. (2) M. Ishikawa, Y. Ohba, Y. Watanabe, H. Nagasaka, H. Sugawara, M. Yamamoto, and G. Hatakoshi : “InGaAlP transverse mode stabilized visible laser diodes fabricated by MOCVD selective growth”, Extend. Abstr. 18th Conf. Solid State Device and Materials, pp. 153-156, Tokyo (1986)
3. Low-threshold, highly reliable 630 nm-band AlGaIP visible laser diodes with AlInP buried waveguide
4. (4) T. Uetani, R. Hiroyama, M. Shono, A. Ibaraki, K. Yodoshi, and T. Niina : “Real-index-guided 630-nm-band AlGaInP laser diodes with AlInP current blocking layer”, : Tech. Dig. Conf. Laser and Electro-Optics 1996, p. 458, Los Angeles (1996)
5. AlGaInP visible laser diodes grown on misoriented substrates
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