Study of Reverse Recovery Characteristic for 3kV 600A 4H-SiC Flat Package Type pn Diodes-Reference-Cited by-同舟云学术

Study of Reverse Recovery Characteristic for 3kV 600A 4H-SiC Flat Package Type pn Diodes

Published:2006 Issue:7 Volume:126 Page:663-668
ISSN:0385-4213
Container-title:IEEJ Transactions on Power and Energy
language:en
Short-container-title:IEEJ Trans. PE

Author:

Ogata Syuji¹,Takayama Daisuke¹,Asano Katsunori¹,Sugawara Yoshitaka¹

Affiliation:

1. Technical Research Center, The Kansai Electric Power Company

Publisher

Institute of Electrical Engineers of Japan (IEE Japan)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

https://www.jstage.jst.go.jp/article/ieejpes/126/7/126_7_663/_pdf

Reference10 articles.

1. (1) Y. Sugawara: “Performances and Application Impacts of Widegap Power Semiconductor Devices—Focusing on SiC—”, IEICE Trans. Electron., Vol. J81-C-II, No. 1, pp. 8-16 (1998-1) (in Japanese)

2. (3) Y. Sugawara, D. takayama, K. Asano, R. Singh, J. Palmour, and T. Hayashi: “12-19kV 4H-SiC pin Diodes with Low Power Loss”, Proc. of 2001 International Symposium on Power Semiconductor Devices & ICs, pp. 27-30, Osaka (2001)

3. (4) Y. Sugawara and K. Asano: “1.4kV 4H-SiC UMOSFET with Low Specific On-Resistance”, Proc. of 1998 International Symposium on Power Semiconductor Devices & ICs, pp. 119-122, Kyoto (1998)

4. (5) S. Ogata, D. Takayama, K. Asano, H. Kodama, and Y. Sugawara: “Study of Static Characteristic for 3kV 600A 4H-SiC Flat Package Type pn Diodes”, IEEJ Trans. PE, Vol. 125, No. 9, pp. 879-884 (2005-9) (in Japanese)

5. (6) H. Lendenmann, A. Mukhitdinov, F. Dahlquist, H. Bleichner, M. Irwin, R. Soderholm, and P. Skytt: “4.5kV 4H-SiC diodes with ideal forward characteristic”, Proc. of 2001 International Symposium on Power Semiconductor Devices & ICs, pp. 31-34, Osaka (2001)