Development Trend of Diamond Electronic Devices; from Attractive Gem Stones to Electronics
Author:
Publisher
Institute of Electrical Engineers of Japan (IEE Japan)
Subject
Electrical and Electronic Engineering
Link
https://www.jstage.jst.go.jp/article/ieejjournal/136/12/136_821/_pdf
Reference16 articles.
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4. (5) K. Ohtsuka, H. Fukuda, K. Suzuki, and A. Sawabe : “Fabrication of Epitaxial Diamond Thin Film on Iridium”, Jpn. J. Appl. Phys., Vol. 36, Part 2, No. 9A/B, pp. L1214-L1216 (1997)
5. (6) H. Kawashima, H. Nogushi, T. Matsumoto, H. Kato, M. Ogura, T. Makino, S. Shirai, D. Takeuchi, and S. Yamasaki : “Electron properties of diamond Schottky barrier diodes fabricated on silicon-based heteroepitaxially grown diamond substrates”, Appl. Phys. Express, Vol. 8, p. 104103 (2015)
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