Author:
Hajdel Mateusz,Muzioł Grzegorz,Nowakowski-Szkudlarek Krzesimir,Siekacz Marcin,Wolny Paweł,Skierbiszewski Czesław
Abstract
The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drift diffusion model and 2D optical mode calculation. Despite of the known effect of increased confinement of an optical mode, especially for long wavelengths, an unexpected influence on the efficiency of carrier injection into the active region is discussed. It is found that InGaN-AlGaN interface is crucial to achieving high injection efficiency. A numerical model is created, which describes the influence of InGaN waveguide and Mg doping of electron blocking layer on basic properties of laser diodes. It is found that an increase of injection efficiency allows to reduce the doping level in an electron blocking layer and take advantage of decreased optical losses.
Publisher
Politechnika Wroclawska Oficyna Wydawnicza
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献