a-Si:N:H prepared by reactive evaporation in ammonia vapour
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Published:1987-08-01
Issue:8
Volume:65
Page:1020-1022
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ISSN:0008-4204
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Container-title:Canadian Journal of Physics
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language:en
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Short-container-title:Can. J. Phys.
Author:
Audas R. D.,Brodie D. E.
Abstract
The reactive evaporation of Si in an ammonia ambient has been used to produce a-Si:N:H thin films. These films are "intrinsic-like" with low room-temperature conductivities (<10−12 S∙cm−1), high activation energies (0.9 eV), and high optical bandgaps (1.9 eV). Films prepared in this manner have been doped using co-evaporation of antimony (n type) and indium (p type). The addition of 2 at.% indium or antimony results in an increase in the room-temperature conductivity by eight and six orders of magnitude respectively. The undoped and doped samples are photoconductive when illuminated with a quartz-halogen source.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy