Some electrical properties of amorphous Cd3As2

Abstract

Amorphous films of Cd3As2 were fabricated by vacuum deposition at pressures less than 10−8 Torr. Conductivity and Hall measurements are reported for the amorphous and crystallized films between 125 and 300 K. Electron mobilities in amorphous films as large as 300 cm2 V−1 s−1 are observed at room temperature in the higher conductivity samples. Amorphous Cd3As2 is a degenerate semiconductor with activation energies between 0.006 and 0.012 eV observed in the different samples. Thermoelectric power measurements agree only qualitatively with this model with [Formula: see text].