Author:
Armitage D.,Champness C. H.
Abstract
A memory switching effect in bulk polycrystalline selenium has been investigated. I–V characteristics are related to structural changes revealed by microscopic examination, where it is shown that the switching mechanism is a crystal–amorphous phase transformation.A molten zone, produced by a direct current through the sample, undergoes a polarity dependent motion. The zone motion is discussed in terms of field-assisted ionic diffusion and it is suggested that this could be made into a useful crystal growing technique.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
9 articles.
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