Author:
Cheung C. Y.,Barrie Robert
Abstract
A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
11 articles.
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