Author:
Armitage D.,Brodie D. E.,Eastman P. C.
Abstract
Switching effects in bulk Te48As30Si12Ge10 amorphous semiconductor have been observed using a planar electrode configuration, with interelectrode spacing of the order of 1 μ. Scanning electron microscope examination of the breakdown region reveals thermal damage, but this may be initiated by an electronic breakdown.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
10 articles.
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