Far-infrared absorption in CdTe

Abstract

Far-infrared absorption in the II–VI compound semiconductor Cd Te has been measured using a Fourier transform spectrometer. Two-phonon density-of-states curves were calculated from shell model parameters determined by Rowe, Nicklow, Price, and Zanio and were compared to the high-accuracy absorption spectrum. Two-phonon combinations and the location of the corresponding critical points in the Brillouin zone were identified with features in the absorption spectrum. From these assignments, accurate values of some normal mode frequencies at certain points in the Brillouin zone were determined.