Effet d'une pulvérisation de l'antimoine dans le a-Si: H
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Published:1989-10-01
Issue:10
Volume:67
Page:1007-1010
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ISSN:0008-4204
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Container-title:Canadian Journal of Physics
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language:en
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Short-container-title:Can. J. Phys.
Author:
Diawara Y.,Currie J. F.,Gujrathi S. C.,Oxorn K.
Abstract
Cathode-sputtering of antimony in a-Si:H yields an amorphous film more conductive than intrinsic a-Si:H. A rapid annealing of the film allows us to increase its conductivity and to observe a dehydrogenation by infrared absorption measurements and by the elastic recoil detection technique. The latter method also gave us a precise analysis of the chemical composition of the amorphous film.[Journal translation]
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy