Ultrasonic attenuation and electrical resistivity in p-InSb at low temperatures and high magnetic fields

Abstract

A complete account is presented of electrical conduction and ultrasonic attenuation processes in p-InSb from 300 K down to 4 K. Four specimens were studied in the concentration range of 1014–1017 for net acceptor impurities. The ultrasonic measurements were made in the frequency range 30–700 MHz in magnetic fields up to 7 T. Supporting direct current (DC) conductivity and Hall effect data showed that carrier thermal freeze-out occurs near 5–6 K. At slightly higher temperatures we observe a relaxation peak in the attenuation for piezoelectric modes. This can be explained in detail by the theory of Hutson and White, which is used to make a qualitative determination of the piezoelectric coupling constant and the dc conductivity.